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[Analysis Case] Evaluation of High Electron Mobility Transistors

Evaluation of crystal coherence and compositional distribution is possible with Cs collector attached STEM.

GaN-based high electron mobility transistors, known as GaN HEMTs (High Electron Mobility Transistors), achieve a two-dimensional electron gas layer through an AlGaN/GaN heterostructure, resulting in high electron mobility. This document presents a case study of the disassembly and evaluation of commercially available GaN HEMT devices. Using HAADF-STEM, we confirmed the crystallographic integrity near the AlGaN/GaN interface. Additionally, we assessed the compositional distribution using EELS. Measurement methods: TEM, EELS. Product field: Power devices. Analysis purpose: Structural evaluation, film thickness evaluation. For more details, please download the document or contact us.

企業：一般財団法人材料科学技術振興財団　MST
価格：Other

Contract Analysis

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[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT

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GaN-based high electron mobility transistors, known as GaN HEMTs (High Electron Mobility Transistors), utilize an AlGaN/GaN heterostructure to achieve a two-dimensional electron gas layer (2DEG), resulting in high electron mobility. They are used in applications such as fast chargers, leveraging these characteristics. This document presents the disassembly and evaluation of normally-off GaN HEMT devices. We will introduce a case study that employs a combination of analytical methods to gather comprehensive insights about the samples. Measurement methods: SIMS, TEM, SCM, SMM. Product field: Power devices. Analysis objectives: Trace concentration measurement, shape evaluation, film thickness evaluation, structural evaluation, product investigation. For more details, please download the document or contact us.

企業：一般財団法人材料科学技術振興財団　MST
価格：Other

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Mobility Transistor - メーカー・企業と製品の一覧

Mobility Transistorの製品一覧

[Analysis Case] Evaluation of High Electron Mobility Transistors

[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT

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